advanced power n-channel enhancement mode electronics corp. power mosfet low on-resistance bv dss 40v simple drive requirement r ds(on) 10m fast switching characteristic i d 51a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 2.8 /w rthj-a maixmum thermal resistance, junction-ambient 110 /w data & specifications subject to change without notice AP0904GJB-HF 44.6 200 halogen-free product parameter rating drain-source voltage 40 total power dissipation gate-source voltage + 20 continuous drain current, v gs @ 10v 51 continuous drain current, v gs @ 10v 32 pulsed drain current 1 thermal data parameter 201203291 1 storage temperature range operating junction temperature range -55 to 150 -55 to 150 the to-251s short lead package is preferred for all commercial- industrial through-hole applications without lead-cutted. g d s a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance and cost-effectiveness. to-251s(jb) gds
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 40 - - v v gs =10v, i d =30a - - 10 m v gs =4.5v, i d =20a - - 15 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =20a - 45 - s i dss drain-source leakage current v ds =40v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =20a - 9 14.4 nc q gs gate-source charge v ds =20v - 2 - nc q gd gate-drain ("miller") charge v gs =4.5v - 6 - nc t d(on) turn-on delay time v ds =20v - 6.5 - ns t r rise time i d =1a - 6.5 - ns t d(off) turn-off delay time r g =3.3 -20- ns t f fall time v gs =10v - 10 - ns c iss input capacitance v gs =0v - 680 1080 pf c oss output capacitance v ds =25v - 160 - pf c rss reverse transfer capacitance f=1.0mhz - 95 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =20a, v gs =0v - - 1.2 v t rr reverse recovery time i s =10a, v gs =0 v , - 22 - ns q rr reverse recovery charge di/dt=100a/s - 16 - nc notes: 1.pulse width limited by max. junction temperature 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. AP0904GJB-HF r ds(on) static drain-source on-resistance 2 2
a p0904gjb-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 20 40 60 80 100 0246810 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 7.0v 6.0v 5.0v v g =4.0v 0 20 40 60 80 100 120 02468 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 6.0v 5.0v v g = 4.0v 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =30a v g =10v 0 10 20 30 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 8 9 10 11 12 13 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =20a t c =25 o c 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th)
AP0904GJB-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 1 10 100 1000 0.1 1 10 100 v ds ,drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 2 4 6 8 10 0 4 8 12 16 20 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =20a v ds =20v 0 200 400 600 800 1000 1200 1 5 9 13 17 21 25 29 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss q v g 4.5v q gs q gd q g charge t d(on) t r t d(off) t f v ds v gs 10% 90% operation in this area limited by r ds(on)
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